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| RB751S-40 / RB751V-40 Diodes Schottky barrier diode RB751S-40 / RB751V-40 !Applications High speed switching For Detection !External dimensions (Units : mm) RB751S-40 CATHODE MARK !Features 1) Small surface mounting type. (EMD2, UMD2) 2) Low reverse current and low forward voltage. 3) High reliability. 1.20.05 1.60.1 5 0.30.05 0.80.05 0.120.05 0.60.1 ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523 RB751V-40 CATHODE MARK CATHODE MARK !Construction Silicon epitaxial planar 2.50.2 1.70.1 2.50.2 1.70.1 5 0.30.05 1.250.1 0.1 +0.1 -0.05 5 0.30.05 1.250.1 0.1 +0.1 -0.05 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 0.7 +0.2 -0.1 0.7 +0.2 -0.1 There are two different markings. !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current * Junction temperature Storage temperature * 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 30 30 200 125 -40~+125 Unit V V mA mA C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Note) ESD sensitive product handling required. Symbol VF IR CT Min. - - - Typ. - - 2.0 Max. 0.37 0.5 - Unit V A pF IF = 1mA VR = 30V Conditions VR = 1V, f = 1MHz RB751S-40 / RB751V-40 Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1000m Typ. pulse measurement REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 100 Ta = 125C 10 Ta = 75C 100 50 Ta = 25C f = 1MHz 100m 10m 1m 100 10 1 0 =1 25 C 20 10 5 1 Ta = 25C 100n Ta = -25C Typ. pulse measurement 5 10 15 20 25 30 35 REVERSE VOLTAGE : VR (V) Ta = 75C Ta Ta = 25C Ta = -25C 10n 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1n 0 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics |
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